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Quartz crucible for single crystal silicon

Name: Quartz crucible for single crystal silicon
Brand: Wanshida
SKU: QC3232

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Quartz crucible for single crystal silicon

Large Image : Quartz crucible for single crystal silicon

Product Details:

Place of Origin:	china
Brand Name:	Wanshida
Certification:	quartz crucible
Model Number:	QC3232

Payment & Shipping Terms:

Minimum Order Quantity:	1
Packaging Details:	carton,straps or pallet
Delivery Time:	7-10days
Payment Terms:	T/T;Western Union
Supply Ability:	2000pcs/month

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Quartz crucible for single crystal silicon

Description

Wanshida quartz galss is supplier of quartz crucibles for single crystal silicon ingot growth by the Czochralski method, of diameter up to 24 inches. Bubble-free inner layer crucibles are available for the most demanding applications.

　　These crucibles are used for semiconductor wafers as well as for solar cells .

1.Specification of Quartz crucible for for single crystal silicon

　　1. using IOTA-CG grade high purity quartz sand(SIO2≥99.99%)

　　2. coated inner layer with strict defect control(foreign inclusions, bubbles, bubble clusters, scratches/scuffs, structure faults, spikes, vapor clouds…)

　　3. high thermal performance(strong heat resistance, high transmission)

　　4.Can be made according to the requirement of our customers high purity crucible,the range of our products is from 18-24 inches.

　　We use high-temperature arc-melting and coating method.

　　To ensure the high purity of quartz crucible,Minde insists to use high purity raw material which is import from U.S and dose not add any domestic quartz sand.

　　
2.Chemical Composition of Quartz crucible for for single crystal silicon

Main trace impurity elements of typical values	Unit :PPM
Al	16
Ca	0.5
Cr	0.06
Cu	0.03
Fe	0.3
K	0.6
Li	0.7
Mg	0.06
Na	1.0
Mn	0.3
Ti	1.3
Oh	30
The main maximum trace impurity elements	Unit :PPM
Al	20
Ca	1.2
Cr	0.08
Cu	0.05
Fe	0.7
K	1.3
Li	1.2
Mg	0.07
Na	1.5
Mn	0.5
Ti	1.5
Oh	35